Invention Grant
- Patent Title: Oxide sintered material and method of manufacturing the same, sputtering target, and method of manufacturing semiconductor device
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Application No.: US16313584Application Date: 2017-02-28
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Publication No.: US10822276B2Publication Date: 2020-11-03
- Inventor: Kenichi Watatani , Miki Miyanaga , Hideaki Awata
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Baker Botts L.L.P.
- Agent Michael A. Sartori
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@63407c5b
- International Application: PCT/JP2017/007700 WO 20170228
- International Announcement: WO2018/020719 WO 20180201
- Main IPC: C04B35/01
- IPC: C04B35/01 ; C04B35/64 ; C04B41/00 ; C04B41/80 ; H01L21/02 ; H01L29/66 ; C23C14/34 ; C23C14/08 ; H01J37/34 ; H01L29/786
Abstract:
There are provided an oxide sintered material containing an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500° C. or more and 1000° C. or less for 30 minutes or longer.
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