- Patent Title: Method for limiting growth of KDP-type crystals with a long seed
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Application No.: US16218291Application Date: 2018-12-12
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Publication No.: US10822715B2Publication Date: 2020-11-03
- Inventor: Hongji Qi , Duanyang Chen , Jianda Shao , Xiaoyi Xie , Bin Wang , Hu Wang
- Applicant: Shanghai Institue of Optics And Fine Mechanics, Chinese Academy of Sciences
- Applicant Address: CN Shanghai
- Assignee: Shanghai Institute of Optics And Fine Mechanics, Chinese Academy of Sciences
- Current Assignee: Shanghai Institute of Optics And Fine Mechanics, Chinese Academy of Sciences
- Current Assignee Address: CN Shanghai
- Agency: Mei & Mark LLP
- Agent Manni Li
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@77d8161e
- Main IPC: C30B7/08
- IPC: C30B7/08 ; C30B29/60 ; C30B29/14 ; C30B29/64

Abstract:
Method for limiting growth of KDP-type crystals with a long seed where an upper and a lower ends of the long seed crystal are respectively limited by an upper baffle plate and a lower tray to restrain growth of a pyramidal surface and allow only four prismatic surfaces in [100] and [010] directions to grow. Finally grown crystal contains no pyramid-prism interface that severely restricts quality of optical element, and all cut optical elements have high optical quality. As four prismatic surfaces are subjected to highly similar growing environment and grow simultaneously, all optical elements cut therefrom have high optical uniformity. Due to uniqueness of a cutting angle of a KDP crystal frequency-tripled element, high cutting efficiency is achieved in the element, and an area of a maximum frequency-tripled element that may be cut is known in advance according to a horizontal size of the grown crystal.
Public/Granted literature
- US20190136403A1 METHOD FOR LIMITING GROWTH OF KDP-TYPE CRYSTALS WITH A LONG SEED Public/Granted day:2019-05-09
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