Invention Grant
- Patent Title: Magnetoresistive memory module and computing device including the same
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Application No.: US16357435Application Date: 2019-03-19
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Publication No.: US10824365B2Publication Date: 2020-11-03
- Inventor: Myoungsoo Jung
- Applicant: MemRay Corporation , YONSEI UNIVERSITY, UNIVERSITY—INDUSTRY FOUNDATION (UIF)
- Applicant Address: KR Seoul KR Seoul
- Assignee: MemRay Corporation,Yonsei University, University-Industry Foundation (UIF)
- Current Assignee: MemRay Corporation,Yonsei University, University-Industry Foundation (UIF)
- Current Assignee Address: KR Seoul KR Seoul
- Agency: Dinsmore & Shohl LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@32cc612d
- Main IPC: G06F3/06
- IPC: G06F3/06 ; H01L27/22 ; H01F10/32 ; H01L43/02 ; G11C11/16 ; G06F11/10 ; G06N20/00 ; H05K1/18 ; H01L43/08 ; G11C11/56 ; G06F13/16

Abstract:
A magnetoresistive memory module used as a main memory of a computing device is provided. A plurality of memory chips are mounted on a printed circuit board, and a memory controller performs data scrubbing. Each memory chip includes a plurality of magnetoresistive memory cells. Each magnetoresistive memory cell includes a magnetoresistive element and an access transistor that transfers a current to the magnetoresistive element, and has a size of a cell area that is substantially similar to a size of a DRAM cell area.
Public/Granted literature
- US20190227732A1 MAGNETORESISTIVE MEMORY MODULE AND COMPUTING DEVICE INCLUDING THE SAME Public/Granted day:2019-07-25
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