Invention Grant
- Patent Title: Systems and methods for writing zeros to a memory array
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Application No.: US15837666Application Date: 2017-12-11
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Publication No.: US10825491B2Publication Date: 2020-11-03
- Inventor: Byung S. Moon , Gary L. Howe , Harish N. Venkata , David R. Brown
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C11/4072 ; G11C8/04 ; G11C11/408 ; G11C7/20 ; G06F12/06 ; G06F11/10 ; G11C29/52 ; G11C29/02 ; G11C29/46
Abstract:
A memory device may include a memory array, which may also include, multiple memory cells. The memory device may also include one or more counters designed to generate internal memory addresses to sequentially access the memory cells and facilitate writing logical zeros to all of the memory cells.
Public/Granted literature
- US20190179552A1 SYSTEMS AND METHODS FOR WRITING ZEROS TO A MEMORY ARRAY Public/Granted day:2019-06-13
Information query
