Invention Grant
- Patent Title: Non-volatile memory with reduced data cache buffer
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Application No.: US16450042Application Date: 2019-06-24
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Publication No.: US10825526B1Publication Date: 2020-11-03
- Inventor: YenLung Li , Hua-Ling Cynthia Hsu , Chen Chen , Min Peng
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/10 ; G11C16/04 ; G11C11/56

Abstract:
In non-volatile memory circuit, the area devoted to the cache buffer of the read and write circuitry is reduced through the sharing of data latches. In an array structure where memory cells are connected along bit lines, and the bit lines organized into columns, each of the columns has an associated set of data latches, including one or more data latches for each bit line of the column. Data is transferred in and out of the read and write circuit on a data bus, where data is transferred between the data latches and the data bus through a set of transfers latches. The area used by the latch structure is reduced by sharing the transfer latches of the read and write circuitry between the data latches of multiple columns.
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