Low latency memory erase suspend operation
Abstract:
A method for an erase operation on a nonvolatile memory array with low-latency erase suspend is described. The nonvolatile memory array includes a plurality of blocks of memory cells, each block including a plurality of sectors of memory cells. The method includes, in response to an erase command identifying a block in the plurality of blocks in the array, erasing the plurality of sectors in the identified block, and determining whether there are over-erased cells in each sector. The method includes recording the over-erased cells for the sector. The method also includes responsive to suspend before a soft program pulse for the sector, applying a correction pulse to the recorded cells.
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