Invention Grant
- Patent Title: Material composition and methods thereof
-
Application No.: US15400842Application Date: 2017-01-06
-
Publication No.: US10825684B2Publication Date: 2020-11-03
- Inventor: Shu-Hao Chang , Chien-Chih Chen , Kuo-Chang Kau , Jeng-Horng Chen , Pi-Yeh Chia , Chi-Ren Chen , Ying-Chih Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; H01L21/027 ; H01L21/033 ; H01L21/768 ; G03F7/11 ; G03F7/16 ; G03F7/20 ; G03F7/38 ; G03F7/039 ; G03F7/038 ; G03F7/26

Abstract:
Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.
Public/Granted literature
- US20170271150A1 MATERIAL COMPOSITION AND METHODS THEREOF Public/Granted day:2017-09-21
Information query
IPC分类: