Invention Grant
- Patent Title: Hydrosilylation in semiconductor processing
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Application No.: US16676793Application Date: 2019-11-07
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Publication No.: US10825686B2Publication Date: 2020-11-03
- Inventor: Matthew S. Thorum , Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/30 ; H01L21/67 ; H01L21/02

Abstract:
An example of forming semiconductor devices can include forming a silicon-hydrogen (Si—H) terminated surface on a silicon structure that includes patterned features by exposing the silicon structure to a hydrogen fluoride (HF) containing solution and performing a surface modification via hydrosilylation by exposing the Si—H terminated surface to an alkene and/or an alkyne.
Public/Granted literature
- US20200075340A1 HYDROSILYLATION IN SEMICONDUCTOR PROCESSING Public/Granted day:2020-03-05
Information query
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