Invention Grant
- Patent Title: Semiconductor structures
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Application No.: US16243297Application Date: 2019-01-09
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Publication No.: US10825690B2Publication Date: 2020-11-03
- Inventor: Cheng Long Zhang , Hai Yang Zhang , Yan Wang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@591c3231
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/3105 ; H01L21/306 ; H01L21/3115 ; H01L21/311 ; H01L21/033 ; H01L21/768
Abstract:
A semiconductor structure a base substrate and a sidewall spacer layer formed on the base substrate. The sidewall spacer layer includes a plurality of first sidewall spacer layers and a plurality of second sidewall spacer layers spaced apart from each other. At least one sidewall of a second sidewall spacer layer of the plurality of second sidewall spacer layers is formed on a first sidewall spacer layer of the plurality of first sidewall spacer layers. The plurality of first sidewall spacer layers has a thickness greater than the plurality of second sidewall spacer layers, based on a surface of the base substrate. The plurality of first sidewall spacer layers has a material structure different than the plurality of second sidewall spacer layers.
Public/Granted literature
- US20190148157A1 SEMICONDUCTOR STRUCTURES Public/Granted day:2019-05-16
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