Invention Grant
- Patent Title: Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
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Application No.: US16795157Application Date: 2020-02-19
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Publication No.: US10825697B2Publication Date: 2020-11-03
- Inventor: Tomoyuki Yamada , Tadashi Kontani , Seiyo Nakashima , Mikio Ohno
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@453a48d8
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/324

Abstract:
There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.
Public/Granted literature
- US20200303219A1 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM Public/Granted day:2020-09-24
Information query
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