Invention Grant
- Patent Title: Metal contact structure and method of forming the same in a semiconductor device
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Application No.: US14262467Application Date: 2014-04-25
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Publication No.: US10825724B2Publication Date: 2020-11-03
- Inventor: Yu-Hung Lin , Sheng-Hsuan Lin , Chih-Wei Chang , You-Hua Chou
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L21/285 ; H01L23/485 ; H01L23/522
Abstract:
A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.
Public/Granted literature
- US20150311150A1 Metal Contact Structure and Method of Forming the Same Public/Granted day:2015-10-29
Information query
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