Invention Grant
- Patent Title: Metal spacer self aligned multi-patterning integration
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Application No.: US16161550Application Date: 2018-10-16
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Publication No.: US10825726B2Publication Date: 2020-11-03
- Inventor: Hsueh-Chung Chen , James J. Kelly , Yann Mignot , Cornelius Brown Peethala , Lawrence A. Clevenger
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/033

Abstract:
A method and structure of forming an interconnect structure with a sidewall image transfer process such as self-aligned double patterning to reduce capacitance and resistance. In these methods and structures, the spacer is a metal.
Public/Granted literature
- US20200118872A1 METAL SPACER SELF ALIGNED MULTI-PATTERNING INTEGRATION Public/Granted day:2020-04-16
Information query
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