Invention Grant
- Patent Title: Semiconductor structure and fabrication method thereof
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Application No.: US16117634Application Date: 2018-08-30
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Publication No.: US10825735B2Publication Date: 2020-11-03
- Inventor: Qing Peng Wang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , SMIC New Technology Research and Development (Shanghai) Corporation
- Applicant Address: CN Shanghai CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,SMIC New Technology Research and Development (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,SMIC New Technology Research and Development (Shanghai) Corporation
- Current Assignee Address: CN Shanghai CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@39eaad6c
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L21/308 ; H01L21/027 ; H01L27/02 ; H01L21/762 ; H01L21/02 ; H01L27/088 ; H01L21/306
Abstract:
A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate. The substrate includes an active region and a blank region disposed adjacent to the active region. The method also includes forming a fin material layer on the substrate. Further, the method includes forming a plurality of fins on the active region, and a plurality of dummy fins on the blank region by etching the fin material layer. A spacing between a fin and an adjacent dummy fin is greater than a spacing between adjacent fins.
Public/Granted literature
- US20190103318A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2019-04-04
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