Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US16136274Application Date: 2018-09-20
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Publication No.: US10825744B2Publication Date: 2020-11-03
- Inventor: Tsang-Po Yang , Jui-Hsiu Jao , Chun-Shun Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co., LLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/66 ; H01L23/60 ; H01L23/522

Abstract:
A method includes forming a transistor over a substrate; forming a conductive structure over the substrate, such that a first end of the conductive structure is electrically coupled to a gate of the transistor, and a second end of the conductive structure is electrically coupled to the substrate; applying biases to the gate of the transistor and source/drain structures of the transistor; determining whether the first end and the second end of the conductive structure are electrically connected; generating, based on the determination, a first result indicating that the first end and the second end of the conductive structure are electrically connected; and qualifying the conductive structure as an antenna in response to the first result.
Public/Granted literature
- US20200098654A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-03-26
Information query
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