Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16080029Application Date: 2016-04-01
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Publication No.: US10825751B2Publication Date: 2020-11-03
- Inventor: Yosuke Nakata , Tatsuya Kawase , Mikio Ishihara , Noboru Miyamoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/060953 WO 20160401
- International Announcement: WO2017/168756 WO 20171005
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L23/373 ; H01L25/18 ; H01L25/07 ; H01L23/433 ; H01L23/367 ; H01L23/00

Abstract:
In semiconductor device, a substrate unit includes an insulating substrate, a first conductor substrate and a second conductor substrate which are disposed on one main surface of the insulating substrate and spaced apart from each other, and a third conductor substrate which is disposed on the other main surface opposite to the one main surface of the insulating substrate. A terminal is connected to a surface of a semiconductor element opposite to the first conductor substrate. The terminal extends from a region above the semiconductor element to a region above the second conductor substrate while being connected to the second conductor substrate. At least a part of the terminal, the substrate unit and the semiconductor element is sealed by a resin. The third conductor substrate is exposed from the resin.
Public/Granted literature
- US20190067159A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-02-28
Information query
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