- Patent Title: Semiconductor device having a stack body including metal films and first insulating films alternately stacked on a semiconductor substrate and including a stepped end portion and manufacturing method thereof
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Application No.: US16298056Application Date: 2019-03-11
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Publication No.: US10825770B2Publication Date: 2020-11-03
- Inventor: Akitsugu Hatazaki , Hiroko Tahara , Naomi Fukumaki , Masayuki Kitamura , Takashi Ohashi
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@670e7e65
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/11551 ; H01L27/11521 ; H01L21/822 ; H01L27/11578 ; H01L23/532 ; H01L21/311
Abstract:
A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.
Public/Granted literature
- US20200091081A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-03-19
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