Invention Grant
- Patent Title: Semiconductor device with electromagnetic interference protection and method of manufacture
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Application No.: US15364051Application Date: 2016-11-29
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Publication No.: US10825780B2Publication Date: 2020-11-03
- Inventor: Chi-Hsi Wu , Hsien-Wei Chen , Li-Hsien Huang , Tien-Chung Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L21/78 ; H01L23/00 ; H01L21/3105 ; H01L21/3205 ; H01L21/321 ; H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L23/31 ; H01L23/498 ; H01L25/065 ; H01L25/10 ; H01L25/00 ; H01L23/538
Abstract:
A method includes forming a first semiconductor device, wherein the first semiconductor device includes a top surface and a bottom surface, and wherein the first semiconductor device includes a metal layer having an exposed first surface. The method also includes forming a Electromagnetic Interference (EMI) layer over the top surface and sidewalls of the first semiconductor device, wherein the EMI layer electrically contacts the exposed first surface of the metal layer. The method also includes forming a molding compound over the EMI layer.
Public/Granted literature
- US20180151510A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE Public/Granted day:2018-05-31
Information query
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