Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16157469Application Date: 2018-10-11
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Publication No.: US10825785B2Publication Date: 2020-11-03
- Inventor: Hisanori Namie , Satoshi Goto , Satoshi Tanaka
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7f966713
- Main IPC: H03F3/191
- IPC: H03F3/191 ; H01L23/66 ; H01L23/00 ; H03F3/195 ; H03F1/56 ; H03F3/213 ; H01L27/06 ; H01L29/735 ; H01L29/73

Abstract:
A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.
Public/Granted literature
- US20190123003A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-25
Information query
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