Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US16367973Application Date: 2019-03-28
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Publication No.: US10825799B2Publication Date: 2020-11-03
- Inventor: Shing-Yih Shih
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L23/48

Abstract:
The present disclosure relates to a semiconductor structure. The semiconductor structure includes a semiconductor unit, one or more bonding structures, and at least one supporter. The semiconductor unit includes at least one via. The one or more bonding structures are disposed over the semiconductor unit and electrically connected to the at least one via. The at least one supporter is disposed over the semiconductor unit. The at least one supporter is a metal block or a polymer block spaced apart from the one or more bonding structures.
Information query
IPC分类: