A solid-state imaging element includes a plurality of shallow light receivers that are arrayed two-dimensionally in the vicinity of the surface of a semiconductor substrate and a plurality of deep light receivers that are arrayed two-dimensionally below the shallow light receivers. The shallow light receivers include visible light image light receivers that photoelectrically convert visible light and infrared light and output signals, and infrared light receivers that photoelectrically convert the infrared light. The infrared light receivers include a first infrared light receiver that is used to correct the signals output from the visible light image light receivers to provide signals of visible light components in the visible light image light receivers and a second infrared light receiver that is connected to the deep light receivers to form a multilayer light receiver.