Invention Grant
- Patent Title: 3D semiconductor device and structure
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Application No.: US16409813Application Date: 2019-05-11
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Publication No.: US10825864B2Publication Date: 2020-11-03
- Inventor: Deepak C. Sekar , Zvi Or-Bach
- Applicant: Monolithic 3D Inc.
- Applicant Address: US CA San Jose
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patent Law Office, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/24 ; H01L27/22 ; H01L27/108 ; H01L21/268 ; H01L21/683 ; H01L21/762 ; H01L21/822 ; H01L21/84 ; H01L27/06 ; H01L27/11 ; H01L29/78 ; H01L27/12 ; H01L27/11578 ; H01L27/11551 ; H01L27/11529 ; H01L29/423 ; H01L27/11526 ; H01L27/11573 ; H01L27/105 ; H01L45/00
Abstract:
A 3D semiconductor device, the device including: a first level including a first single crystal layer; first transistors overlaying the first single crystal layer; second transistors overlaying the first transistors; and a second level including a second single crystal layer, the second level overlays the second transistors, where the first transistors and the second transistors each includes a polysilicon channel.
Public/Granted literature
- US20190273121A1 3D SEMICONDUCTOR DEVICE AND STRUCTURE Public/Granted day:2019-09-05
Information query
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