Invention Grant
- Patent Title: Semiconductor device and fabricating method thereof
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Application No.: US16693058Application Date: 2019-11-22
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Publication No.: US10825899B2Publication Date: 2020-11-03
- Inventor: Chun-Chieh Lu , Meng-Hsuan Hsiao , Tung-Ying Lee , Ling-Yen Yeh , Chih-Sheng Chang , Carlos H. Diaz
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/51 ; H01L29/78 ; H01L27/108 ; H01L27/12 ; H01L27/11585 ; H01L23/31 ; H01L21/465 ; H01L29/08 ; H01L21/768 ; H01L29/06 ; H01L21/441 ; H01L29/66 ; H01L27/24 ; H01L27/092 ; H01L27/11592 ; H01L29/778 ; H01L29/786 ; H01L21/02 ; H01L29/24 ; H01L21/3105 ; H01L21/027
Abstract:
A method of fabricating a semiconductor device includes forming a fin structure on a substrate, forming a channel layer on a sidewall and a top surface of the fin structure, and forming a gate stack over the channel layer. The channel layer includes a two-dimensional (2D) material. The gate stack includes a ferroelectric layer.
Public/Granted literature
- US20200098866A1 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF Public/Granted day:2020-03-26
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