Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16449469Application Date: 2019-06-24
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Publication No.: US10825923B2Publication Date: 2020-11-03
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5647f944 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@69ad6004
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/06 ; H01L29/40 ; H01L29/66 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L29/861
Abstract:
A semiconductor device is provided comprising a semiconductor substrate of a first conductivity type and a dummy trench portion having a main body portion and one or more branch portions, the main body portion formed in a front surface of the semiconductor substrate and extending in a predetermined extending direction, the branch portions extending from the main body portion in directions different from the extending direction. The semiconductor substrate has an emitter region of first conductivity type and a base region of a second conductivity type which are provided sequentially from the front surface side of the semiconductor substrate, and the dummy trench portion has a dummy trench which penetrates the emitter region and the base region from the front surface of the semiconductor substrate, and a dummy insulating portion which is provided within the dummy trench.
Public/Granted literature
- US20190312135A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-10-10
Information query
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