Invention Grant
- Patent Title: Quantum dot light-emitting diode and display apparatus thereof
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Application No.: US16348295Application Date: 2017-08-25
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Publication No.: US10826009B2Publication Date: 2020-11-03
- Inventor: Zhurong Liang , Weiran Cao
- Applicant: TCL TECHNOLOGY GROUP CORPORATION
- Applicant Address: CN Huizhou
- Assignee: TCL TECHNOLOGY GROUP CORPORATION
- Current Assignee: TCL TECHNOLOGY GROUP CORPORATION
- Current Assignee Address: CN Huizhou
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6b4dc76a
- International Application: PCT/CN2017/099061 WO 20170825
- International Announcement: WO2018/090691 WO 20180524
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L33/06 ; H01L33/26 ; H01L51/00

Abstract:
A quantum dot light-emitting diode and a display apparatus comprising the quantum dot light-emitting diode are provided. The quantum dot light-emitting diode comprises an anode, a hole injecting layer, a hole transporting layer, a quantum dot light-emitting layer, an electron transporting layer and a cathode from bottom to top, wherein the materials of the quantum dot light-emitting layer contain quantum dots and CuSCN nano-particles. By blending quantum dots and CuSCN nano-particles into a membrane to prepare a quantum dot light-emitting layer, a hole trap state on the surface of the quantum dots is passivated, and the transporting effect of a hole is improved, so that the injection of holes in the quantum dot light-emitting diode and that of electrons achieve balance, and thus the light-emitting efficiency and stability are improved.
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