Invention Grant
- Patent Title: High-efficiency QLED structures
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Application No.: US16446677Application Date: 2019-06-20
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Publication No.: US10826010B1Publication Date: 2020-11-03
- Inventor: David James Montgomery , Tim Michael Smeeton , Edward Andrew Boardman
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/52 ; H01L27/32

Abstract:
A light-emitting structure maximizes constructive interference for light emission by adjusting charge carrier mobilities of different sub-pixel emissive layers such that charge recombination occurs at a boundary of each emissive layer and one of the charge transport layers. The light-emitting layer structure includes two electrode layers that respectively generate first and second charges that are carried via first and second charge transport layers, and a plurality of emissive layers (EMLs) including a first EML having a first charge mobility favoring the first charges and a second EML having a second charge mobility favoring second charges. The first EML emits light by recombination of the first and second charges at a first boundary layer formed at one of the charge transport layers and the first EML, and the second EML emits light by recombination of the first and second charges at a second boundary layer formed at the other of the charge transport layers and the second EML.
Information query
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