Invention Grant
- Patent Title: Linearity enhancement of high power amplifiers
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Application No.: US16224153Application Date: 2018-12-18
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Publication No.: US10826439B2Publication Date: 2020-11-03
- Inventor: Ramanujam Srinidhi Embar , Ibrahim Khalil , Abdulrhman M. S. Ahmed , Ricardo Uscola
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F1/32 ; H03F1/56 ; H03F3/213

Abstract:
A radio frequency (RF) amplifier circuit includes a field effect transistor (FET) (e.g., a FET belonging to a III-V FET enhancement group), where the FET includes a gate terminal coupled to an RF input node. The circuit further includes a prematch and biasing network coupled between a bias voltage node and the RF input node. The prematch and biasing network includes a nonlinear gate current blocking device configured to block a current from flowing between the bias voltage node and the RF input node.
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