Invention Grant
- Patent Title: Power unit with an integrated pull-down transistor
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Application No.: US15831623Application Date: 2017-12-05
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Publication No.: US10826487B2Publication Date: 2020-11-03
- Inventor: Haian Lin , Frank Alexander Baiocchi , Scott Edward Ragona , Jonathan Almeria Noquil
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Lawrence J. Bassuk; Charles A. Brill; Frank D. Cimino
- Main IPC: H02M3/158
- IPC: H02M3/158 ; H03K17/687 ; H03K17/16 ; H03K17/06 ; H03K17/0412
Abstract:
One example relates to a circuit that includes a first integrated circuit die and a second integrated circuit die. The first integrated circuit die has a power field effect transistor (FET) and a pull-down FET coupled to the power FET. The second integrated circuit die has a pull-up FET coupled to the power FET.
Public/Granted literature
- US20190173464A1 POWER UNIT WITH AN INTEGRATED PULL-DOWN TRANSISTOR Public/Granted day:2019-06-06
Information query
IPC分类:
