A system, method and computer program product for extracting integrated circuit on-chip parasitic capacitance in semiconductor structures including structures formed according to a Self-Aligned Double Patterning (SADP) semiconductor manufacturing process. A method of calculating the capacitance of a conductive signal wire in a SADP layer whose adjacent wires or groups of wires are floating (not connected to a circuit or net and not signal carrying). Further, there is provided a system running an iterative method for accurately and efficiently eliminating a group of floating metals by eliminating one floating metal wire per iteration while extracting its corresponding on-chip parasitic coupling capacitance effect. Further, system and methods calculate parasitic capacitance calculation for an “isolated” wire(s) or a “semi-isolated wire” resulting from employing a Self-Aligned Double Patterning (SADP) processing technique. The system and method provides a capacitance calculation and circuit simulation solution without involving use of and without computing a capacitance matrix.