A semiconductor storage device includes first wiring lines extending in a first direction, second wiring lines extending in a second direction, memory cells at intersections of the first and second wiring lines. A selection unit concurrently selects, as selected memory cells, at least two memory cells that are between one of the first wiring lines and one of the second wiring lines and divided into a plurality of contiguous sections along the first wiring line, and a driver applies a voltage to selected memory cells through the first and second wiring lines. The at least two memory cells are located in the same section and the driver applies a first voltage when the selected memory cells are in a first section, and applies a second voltage, different from the first voltage, when the selected memory cells are in a second section.