Invention Grant
- Patent Title: Perpendicular magnetic memory with symmetric fixed layers
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Application No.: US15735625Application Date: 2015-06-26
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Publication No.: US10832749B2Publication Date: 2020-11-10
- Inventor: Charles C. Kuo , Justin S. Brockman , Juan G. Alzate Vinasco , Kaan Oguz , Kevin P. O'Brien , Brian S. Doyle , Mark L. Doczy , Satyarth Suri , Robert S. Chau
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- International Application: PCT/US2015/038035 WO 20150626
- International Announcement: WO2016/209272 WO 20161229
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; G11C11/16

Abstract:
An embodiment includes an apparatus including: a substrate; a perpendicular magnetic tunnel junction (pMTJ), on the substrate, including a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers; a first dielectric layer between the first fixed layer and the free layer; and a second layer between the second fixed layer and the free layer. Other embodiments are described herein.
Public/Granted literature
- US20200043536A1 PERPENDICULAR MAGNETIC MEMORY WITH SYMMETRIC FIXED LAYERS Public/Granted day:2020-02-06
Information query
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