Invention Grant
- Patent Title: Process of forming silicon nitride (SiN) film and semiconductor device providing SiN film
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Application No.: US16210773Application Date: 2018-12-05
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Publication No.: US10832905B2Publication Date: 2020-11-10
- Inventor: Kazuhide Sumiyoshi
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@497fc537
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66
Abstract:
A low pressure chemical vapor deposition (LPCVD) technique for nitride semiconductor materials includes steps of: setting a temperature in a furnace to be 750 to 900° C.; substituting an atmosphere in the furnace to ammonia (NH3); depositing a SiN film at an initial pressure by supplying di-chloro-silane (SiH2Cl2); and subsequently depositing the SiN film at a deposition pressure that is higher than the initial pressure. The invention has a feature that the initial pressure is at least higher than 60% of the deposition pressure.
Public/Granted literature
- US20190172706A1 PROCESS OF FORMING SILICON NITRIDE (SIN) FILM AND SEMICONDUCTOR DEVICE PROVIDING SIN FILM Public/Granted day:2019-06-06
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