Invention Grant
- Patent Title: Insulator semiconductor device-structure
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Application No.: US16269794Application Date: 2019-02-07
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Publication No.: US10832920B2Publication Date: 2020-11-10
- Inventor: Xianchao Wang
- Applicant: Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Beijing CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Beijing CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@32f10969
- Main IPC: H01L21/311
- IPC: H01L21/311 ; B81C1/00 ; H01L21/3213 ; H01L29/16 ; H01L21/02
Abstract:
A semiconductor device includes a semiconductor substrate, a first semiconductor layer on the semiconductor substrate and having an exposed portion of a lower surface, a capping layer on the first semiconductor layer, a second semiconductor layer below the capping layer and having a side surface substantially in full contact with the capping layer, a cavity defined by the first semiconductor layer, the second semiconductor layer, and the capping layer, and a through-hole passing through the capping layer and the second semiconductor layer and extending to the cavity.
Public/Granted literature
- US20190172721A1 INSULATOR SEMICONDUCTOR DEVICE-STRUCTURE Public/Granted day:2019-06-06
Information query
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