Invention Grant
- Patent Title: Methods and structures for forming uniform fins when using hardmask patterns
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Application No.: US16392064Application Date: 2019-04-23
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Publication No.: US10832955B2Publication Date: 2020-11-10
- Inventor: Peng Xu , Kangguo Cheng , Yann Mignot , Choonghyun Lee
- Applicant: ELPIS TECHNOLOGIES INC.
- Applicant Address: CA Ottawa
- Assignee: ELPIS TECHNOLOGIES INC.
- Current Assignee: ELPIS TECHNOLOGIES INC.
- Current Assignee Address: CA Ottawa
- Agency: VanTek IP LLP
- Agent Shin Hung
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/308 ; H01L29/66 ; H01L21/3065 ; H01L27/088 ; H01L29/06 ; H01L21/762 ; H01L21/3213 ; H01L27/092 ; H01L27/12 ; H01L29/78 ; H01L29/417 ; H01L21/311 ; H01L29/775
Abstract:
A method for manufacturing a semiconductor device includes forming a hardmask layer on a substrate, patterning the hardmask layer to form a plurality of patterned hardmask portions on the substrate, depositing a dummy hardmask layer on the substrate, patterning the dummy hardmask layer to form a plurality of patterned dummy hardmask portions on the substrate, wherein each of the plurality of patterned dummy hardmask portions is positioned adjacent respective outermost patterned hardmask portions of the plurality of patterned hardmask portions, and transferring a pattern of the plurality of patterned hardmask portions and the plurality of patterned dummy hardmask portions to the substrate to form a plurality of fins and a plurality of dummy fins from the substrate.
Public/Granted literature
- US20190252263A1 METHODS AND STRUCTURES FOR FORMING UNIFORM FINS WHEN USING HARDMASK PATTERNS Public/Granted day:2019-08-15
Information query
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