Invention Grant
- Patent Title: FinFET gate structure and method for fabricating the same
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Application No.: US16458495Application Date: 2019-07-01
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Publication No.: US10832959B2Publication Date: 2020-11-10
- Inventor: Shiu-Ko Jangjian , Ren-Hau Yu , Chi-Cherng Jeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW Hsin-chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/092 ; H01L29/49 ; H01L21/285 ; H01L21/8238 ; H01L21/28 ; H01L29/78
Abstract:
A semiconductor device includes a n-type gate structure over a first semiconductor fin, in which the n-type gate structure is fluorine incorporated and includes a n-type work function metal layer overlying the first high-k dielectric layer. The n-type work function metal layer includes a TiAl (titanium aluminum) alloy, in which an atom ratio of Ti (titanium) to Al (aluminum) is in a range substantially from 1 to 3. The semiconductor device further includes a p-type gate structure over a second semiconductor fin, in which the p-type gate structure is fluorine incorporated includes a p-type work function metal layer overlying the second high-k dielectric layer. The p-type work function metal layer includes titanium nitride (TiN), in which an atom ratio of Ti to N (nitrogen) is in a range substantially from 1:0.9 to 1:1.1.
Public/Granted literature
- US20190326176A1 FINFET GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-10-24
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