Techniques that facilitate integration of artificial intelligence devices are provided. In one example, a device includes a first dual-damascene layer, a second dual-damascene layer and an artificial intelligence memory device. The first dual-damascene layer comprises a first set of copper connections formed in first dielectric material. The second dual-damascene layer that comprises a second set of copper connections formed in second dielectric material. The artificial intelligence memory device is integrated between the first dual-damascene layer and the second dual-damascene layer. A through-level via (TLV) electrical connection associated with the artificial intelligence memory device provides an interconnection between the first set of copper connections and the second set of copper connections.