Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16357962Application Date: 2019-03-19
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Publication No.: US10833068B2Publication Date: 2020-11-10
- Inventor: Akihiko Tsubaki , Kanako Deguchi
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@398c4ff6
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/861 ; H01L49/02 ; H01L29/732 ; H01L27/02

Abstract:
The present disclosure provides a semiconductor device that prevents a resistor component connected in series with a base electrode from the electrostatic damage. A semiconductor device includes, a collector layer, which is a first conductivity type semiconductor, a base layer, which is a second conductivity type semiconductor and connected with the collector layer, an emitter layer, which is the first conductivity type semiconductor and connected with the base layer, a first electrode, electrically connected to the base layer, a first resistor component, connected in series with the first electrode in a conductive path connecting the first electrode and the base layer, a second electrode, electrically connected to the emitter layer and the first resistor component; and a protection component, connected to the first electrode in parallel with the first resistor component, wherein the protection component comprises a pair of diodes formed by a pn junction and by a way of making both ends of the conductive path into a same polarity.
Public/Granted literature
- US20190304969A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-10-03
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