Invention Grant
- Patent Title: Power device structure with improved reliability and efficiency
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Application No.: US15946688Application Date: 2018-04-05
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Publication No.: US10833083B2Publication Date: 2020-11-10
- Inventor: Dan Shen
- Applicant: SYNAPTICS INCORPORATED
- Applicant Address: US CA San Jose
- Assignee: SYNAPTICS CORPORATION
- Current Assignee: SYNAPTICS CORPORATION
- Current Assignee Address: US CA San Jose
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/092 ; H01L29/10 ; H01L21/8238 ; H03F3/217 ; H03F3/185 ; H02M3/155

Abstract:
Systems and methods according to one or more embodiments are provided for improved reliability and efficiency of high side power stage output drivers used in switching amplifiers. In one example, a system includes a power device structure comprising an nwell structure formed within a semiconductor p substrate and a pwell structure formed within the nwell structure. The system further includes one or more NMOS electronic power devices formed on the pwell structure and a pwell guardring formed on the pwell structure configured to surround the one or more NMOS electronic power devices. The system further includes an nwell guardring formed on the nwell structure configured to surround the pwell structure and a p+ guardring formed on the nwell structure configured to surround the nwell guardring.
Public/Granted literature
- US20190312033A1 POWER DEVICE STRUCTURE WITH IMPROVED RELIABILITY AND EFFICIENCY Public/Granted day:2019-10-10
Information query
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