Invention Grant
- Patent Title: Semiconductor memory device and method for manufacturing the same with increased storage capacity
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Application No.: US16299727Application Date: 2019-03-12
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Publication No.: US10833098B2Publication Date: 2020-11-10
- Inventor: Akira Takashima , Tsunehiro Ino , Yuuichi Kamimuta , Ayaka Suko
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@56cbca3e
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L29/51 ; H01L29/423 ; H01L21/02 ; H01L29/10 ; H01L21/28
Abstract:
According to one embodiment, a semiconductor memory device includes a first conductive member, a first semiconductor member, and a first stacked member provided between the first conductive member and the first semiconductor member. The first stacked member includes a first insulating film, a second insulating film provided between the first insulating film and the first semiconductor member, first and second layers. The first layer includes aluminum and nitrogen and is provided between the first and second insulating films. A first thickness of the first layer along a first direction is 3 nm or less. The first direction is from the first semiconductor member toward the first conductive member. The second layer contacts the first layer, includes silicon and nitrogen, and is provided at one of a position between the first layer and the second insulating film or a position between the first layer and the first insulating film.
Public/Granted literature
- US20190319043A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2019-10-17
Information query
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