Invention Grant
- Patent Title: Pad structure for front side illuminated image sensor
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Application No.: US15149561Application Date: 2016-05-09
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Publication No.: US10833119B2Publication Date: 2020-11-10
- Inventor: Kai-Chun Hsu , Ching-Chun Wang , Dun-Nian Yaung , Jeng-Shyan Lin , Shyh-Fann Ting
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/00

Abstract:
The present disclosure relates to an integrated circuit having a bond pad with a relatively flat surface topography that mitigates damage to underlying layers. In some embodiments, the integrated circuit has a plurality of metal interconnect layers within a dielectric structure over a substrate. A passivation structure is arranged over the dielectric structure. The passivation structure has a recess with sidewalls connecting a horizontal surface of the passivation structure to an upper surface of the passivation structure. A bond pad is arranged within the recess and has a lower surface overlying the horizontal surface. One or more protrusions extend outward from the lower surface through openings in the passivation structure to contact one of the metal interconnect layers. Arranging the bond pad within the recess and over the passivation structure mitigates stress to underlying layers during bonding without negatively impacting an efficiency of an image sensing element within the substrate.
Public/Granted literature
- US20170117316A1 PAD STRUCTURE FOR FRONT SIDE ILLUMINATED IMAGE SENSOR Public/Granted day:2017-04-27
Information query
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