Invention Grant
- Patent Title: Leakage current reduction in stacked metal-insulator-metal capacitors
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Application No.: US15404860Application Date: 2017-01-12
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Publication No.: US10833148B2Publication Date: 2020-11-10
- Inventor: Takashi Ando , Hemanth Jagannathan , Paul C. Jamison , John Rozen
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Rabin Bhattacharya
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/02

Abstract:
Capacitors and methods of forming the same include forming a dielectric layer on a first metal layer. The dielectric layer is oxygenated such that interstitial oxygen is implanted in the dielectric layer. A second metal layer is formed on the dielectric layer. The dielectric layer is heated to release the interstitial oxygen and to oxidize the first and second metal layers at interfaces between the dielectric layer and the first and second metal layers.
Public/Granted literature
- US20180197943A1 LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS Public/Granted day:2018-07-12
Information query
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