Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15677089Application Date: 2017-08-15
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Publication No.: US10833152B2Publication Date: 2020-11-10
- Inventor: Tien-Lu Lin , Jung-Hung Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/092 ; H01L21/8238 ; H01L27/12 ; H01L21/84 ; H01L29/10

Abstract:
A semiconductor device includes a substrate, a liner, and an isolation structure. The substrate has at least one first semiconductor fin and at least one second semiconductor fin. The liner is disposed on at least one sidewall of the second semiconductor fin. The isolation structure is disposed over the substrate, in which the isolation structure is in contact with the first semiconductor fin and the liner.
Public/Granted literature
- US20190058033A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-02-21
Information query
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