Invention Grant
- Patent Title: Switch with local silicon on insulator (SOI) and deep trench isolation
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Application No.: US15703220Application Date: 2017-09-13
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Publication No.: US10833153B2Publication Date: 2020-11-10
- Inventor: Qizhi Liu , Steven M. Shank , John J. Ellis-Monaghan , Anthony K. Stamper
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Calderon Safran & Cole, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/12 ; H01L29/10 ; H01L21/02 ; H01L21/84 ; H01L21/764 ; H01L21/762 ; H01L29/786
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to a switch with local silicon on insulator (SOI) and deep trench isolation structures and methods of manufacture. The structure a structure comprises an air gap located under a device region and bounded by an upper etch stop layer and deep trench isolation structures.
Public/Granted literature
- US20190081138A1 SWITCH WITH LOCAL SILICON ON INSULATOR (SOI) AND DEEP TRENCH ISOLATION Public/Granted day:2019-03-14
Information query
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