Invention Grant
- Patent Title: Trenched bottom electrode and liftoff based molecular devices
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Application No.: US16102732Application Date: 2018-08-14
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Publication No.: US10833162B2Publication Date: 2020-11-10
- Inventor: Pawan Tyagi
- Applicant: Pawan Tyagi
- Agency: Bay Area IP Group, LLC
- Agent Ariel S. Bentolila
- Main IPC: H01L29/43
- IPC: H01L29/43 ; H01L21/02 ; H01L21/027 ; H01L21/04

Abstract:
A system and method for fabricating at least one of, a molecular device element and a TBELMD including depositing a first electrode material on an insulating substrate or layer, performing a photolithography process in the first electrode material, creating a trench component in the first electrode material with the photolithography process, determining a section of the electrode material to remove based on at least one of, a molecular device element and a TBELMD to be produced, removing the section of said first electrode material, oxidizing a portion of the first electrode material, creating a first insulator part from the oxidized portion of the first electrode material, in which the oxidized portion of the first electrode material includes at least a first electrode metal surface, depositing a second electrode material, and bridging the first and second electrode material.
Public/Granted literature
- US20200058752A1 Trenched Bottom Electrode and Liftoff based Molecular Devices Public/Granted day:2020-02-20
Information query
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