Invention Grant
- Patent Title: Heterojunction semiconductor device having source and drain pads with improved current crowding
-
Application No.: US15678102Application Date: 2017-08-15
-
Publication No.: US10833185B2Publication Date: 2020-11-10
- Inventor: Wen-Chia Liao , Ying-Chen Liu , Chen-Ting Chiang
- Applicant: DELTA ELECTRONICS, INC.
- Applicant Address: TW Taoyuan
- Assignee: DELTA ELECTRONICS, INC.
- Current Assignee: DELTA ELECTRONICS, INC.
- Current Assignee Address: TW Taoyuan
- Agency: CKC & Partners Co., LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@840363b com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@422a897b com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2e03af1e
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L23/495 ; H01L29/20 ; H01L29/417 ; H01L29/205 ; H01L29/40 ; H01L23/00 ; H01L23/31 ; H01L23/535 ; H01L23/528 ; H01L29/423 ; H01L23/522 ; H01L29/10
Abstract:
A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, a source pad, a drain pad, and a source external connecting element. The source electrode, the drain electrode, and the gate electrode are disposed on an active region of the active layer. The source pad is electrically connected to the source electrode and includes a body portion, a plurality of branch portions, and a current diffusion portion. The body portion is at least partially disposed on the active region of the active layer. The current diffusion portion interconnects the body portion and the branch portions. A width of the current diffusion portion is greater than a width of the branch portion and less than a half of a width of the body portion. The source external connecting element is disposed on the body portion and spaced from the current diffusion portion.
Public/Granted literature
- US20180026125A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-01-25
Information query
IPC分类:
