- Patent Title: Magnetic tunnel junction element and method for manufacturing same
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Application No.: US16328852Application Date: 2017-03-21
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Publication No.: US10833256B2Publication Date: 2020-11-10
- Inventor: Hiroaki Honjo , Tetsuo Endoh , Shoji Ikeda , Hideo Sato , Hideo Ohno
- Applicant: TOHOKU UNIVERSITY
- Applicant Address: JP Sendai
- Assignee: TOHOKU UNIVERSITY
- Current Assignee: TOHOKU UNIVERSITY
- Current Assignee Address: JP Sendai
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3b6646b7
- International Application: PCT/JP2017/011263 WO 20170321
- International Announcement: WO2018/042732 WO 20180308
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/10 ; H01L43/08 ; H01L43/02 ; H01L27/22

Abstract:
A magnetic tunnel junction element includes, in a following stack order, an underlayer formed of a metal material, a fixed layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, or alternatively, the magnetic tunnel junction element includes, in a following stack order, a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, an underlayer formed of a metal material, and a fixed layer formed of a ferromagnetic body, wherein the fixed layer is formed and stacked after performing plasma treatment to a surface of the underlayer having been formed.
Public/Granted literature
- US20190189917A1 MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING SAME Public/Granted day:2019-06-20
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