Invention Grant
- Patent Title: CTE-matched silicon-carbide submount with high thermal conductivity contacts
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Application No.: US16052517Application Date: 2018-08-01
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Publication No.: US10833474B2Publication Date: 2020-11-10
- Inventor: Manoj Kanskar , Zhigang Chen
- Applicant: nLIGHT, Inc.
- Applicant Address: US WA Vancouver
- Assignee: nLIGHT, Inc.
- Current Assignee: nLIGHT, Inc.
- Current Assignee Address: US WA Vancouver
- Agency: Klarquist Sparkman, LLP
- Main IPC: H01S5/022
- IPC: H01S5/022 ; H01S5/323 ; H01S5/024 ; H01L23/00 ; H01S5/00 ; H01S5/40
Abstract:
Laser diode submounts include a SiC substrate on which a thick conductive layer is supplied to use in mounting a laser diode. The thick conductive layer is typically gold or copper, and can be electrically coupled to a base laser that is used to define laser diode couplings.
Public/Granted literature
- US20190044302A1 CTE-MATCHED SILICON-CARBIDE SUBMOUNT WITH HIGH THERMAL CONDUCTIVITY CONTACTS Public/Granted day:2019-02-07
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