- Patent Title: Enhanced efficiency of LED structure with n-doped quantum barriers
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Application No.: US16423407Application Date: 2019-05-28
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Publication No.: US10840408B1Publication Date: 2020-11-17
- Inventor: Jian Yin , Dayan Ban , Ehsanollah Fathi , Gholamreza Chaji
- Applicant: VueReal Inc.
- Applicant Address: CA Waterloo
- Assignee: VueReal Inc.
- Current Assignee: VueReal Inc.
- Current Assignee Address: CA Waterloo
- Agency: Nixon Peabody LLP
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/02 ; H01L33/14 ; H01L33/00 ; H01L33/32 ; H01L33/30
Abstract:
The present invention provides light-emitting devices with improved quantum efficiency. The light emitting diode structure comprising: a p-doped layer, an n-doped layer; and a multiple quantum well structure sandwiched between the p-doped layer and n-doped layer, wherein the multiple quantum well structure comprising a quantum well disposed between n-doped barrier layers.
Public/Granted literature
- US20200381584A1 ENHANCED EFFICIENCY OF LED STRUCTURE WITH N-DOPED QUANTUM BARRIERS Public/Granted day:2020-12-03
Information query
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