- Patent Title: Thermal control for formation and processing of aluminum nitride
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Application No.: US16714939Application Date: 2019-12-16
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Publication No.: US10851474B2Publication Date: 2020-12-01
- Inventor: Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
- Applicant: Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
- Applicant Address: US NY Green Island
- Assignee: CRYSTAL IS, INC.
- Current Assignee: CRYSTAL IS, INC.
- Current Assignee Address: US NY Green Island
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C30B29/40 ; C30B23/06 ; H01L33/00 ; C30B23/00 ; H01S5/30 ; H01S5/343 ; H01S5/02 ; H01L21/02
Abstract:
In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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