Invention Grant
- Patent Title: Semiconductor apparatus and potential measuring apparatus
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Application No.: US16343598Application Date: 2017-11-17
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Publication No.: US10852292B2Publication Date: 2020-12-01
- Inventor: Masahiro Sato , Machiko Kametani , Jun Ogi , Yuri Kato
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JP2016-235130 20161202
- International Application: PCT/JP2017/041416 WO 20171117
- International Announcement: WO2018/101075 WO 20180607
- Main IPC: G01N33/483
- IPC: G01N33/483 ; G01N27/27 ; G01N27/30 ; G01N33/487 ; H01L27/02 ; H03F1/52

Abstract:
The present disclosure relates to a semiconductor apparatus and a potential measuring apparatus capable of preventing electrostatic breakdown in an electrode formation process when an electrode and an amplifier are provided on a same substrate. A diode is provided of which a cathode is connected to a previous stage of an amplifying transistor for amplifying a signal read by a read electrode for reading a potential having contact with liquid in which a specimen is input and an anode is grounded. With such a configuration, by bypassing a negative charge generated between the electrode and the amplifying transistor in the electrode formation process from the diode and discharging the negative charge toward ground so as to prevent electrostatic breakdown. This is applicable to a bioelectric potential measuring apparatus.
Public/Granted literature
- US20200049688A1 SEMICONDUCTOR APPARATUS AND POTENTIAL MEASURING APPARATUS Public/Granted day:2020-02-13
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