Invention Grant
- Patent Title: Phase shifter mask
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Application No.: US16504831Application Date: 2019-07-08
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Publication No.: US10852634B2Publication Date: 2020-12-01
- Inventor: Chun-Lang Chen , Chih-Chiang Tu , Shih-Hao Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G03F1/26
- IPC: G03F1/26 ; G03F1/28

Abstract:
A phase shift mask (PSM) includes a light transmitting substrate. The PSM further includes a phase shifter over the light transmitting substrate, wherein the phase shifter includes a plurality of semiconductor layers and a plurality of dielectric layers stacked in an alternating fashion.
Public/Granted literature
- US20190332003A1 PHASE SHIFTER MASK Public/Granted day:2019-10-31
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